The 16th European Microscopy Congress 2016 » Materials Science » Semiconductors and devices

Meeting: The 16th European Microscopy Congress 2016

Session: Materials Science

Topic: Semiconductors and devices

A mechanism for the introduction of threading dislocations in III-nitride epitaxial layers from closed basal stacking fault domains

Julita Smalc-Koziorowska, Calliope Bazioti, Martin Albrecht, Georgios Dimitrakopulos
A novel way of measuring lifetime at the nanometer scale using specific fast electron-matter interactions

Sophie Meuret, Luiz Tizei, Thomas Auzelle, Thibault Cazimajou, Romain Bourrellier, Rudee Songmuang, Huan-Cheng Chang, François Treussart, Bruno Daudin, Bruno Gayral, Mathieu Kociak
Advanced characterization of colloidal semiconductor nanocrystals by 2D and 3D electron microscopy

Eva Bladt, Bart Goris, Eline Hutter, Ward van der Stam, Relinde Moes, Celso de Mello Donega, Daniël Vanmaekelbergh, Sara Bals
Analysis of core/shell nanoparticles by electron microscopy techniques

Natalia Fernández-Delgado, Miriam Herrera-Collado, Pedro Rodríguez-Cantó, Rafael Abargues, E Moya López, Juan Martínez-Pastor, Sergio Molina
Analysis of semipolar InxGa1-xN/GaN heterostructures by WBDF and HRTEM imaging

Xiaodan Chen, Haoyuan Qi, Yueliang Li, Tobias Meisch, Ferdinand Scholz, Ute Kaiser
Analysis of strain and composition in GeSi/Si heterostructures by electron microscopy

Knut Müller-Caspary, Andreas Oelsner, Pavel Potapov, Thomas Schmidt
Analysis of the Sb and N distribution in GaAsSb/GaAsN superlattices for solar cell applications.

Daniel F. Reyes, Veronica Braza, Alicia Gonzalo, Antonio D. Utrilla, Davide F. Grossi, Paul M. Koenraad,, Alvaro Guzman, Adrian Hierro, Jose M. Ulloa, Teresa Ben, David Gonzalez
Analytical electron microscopy characterization of light-emitting diodes based on ordered InGaN nanocolumns

Almudena Torres-Pardo, Žarko Gačević, Noemi García-Lepetit, Marcus Müller, Sebastian Metzner, Ana Bengoechea-Encabo, Steven Albert, Frank Bertram, Peter Veit, Juergen Christen, Enrique Calleja, Jose M. González-Calbet
Anomalous contrast behavior for STEM HAADF imaging of ordered In_0.33Ga_0.67N monolayers

Toni Markurt, Tobias Schulz, Xin Qiang Wang, Xian Tong Zheng, Ding Yu Ma, Martin Albrecht
Artefact-free top-down TEM lamella preparation from a 14 nm technology IC

Andrey Denisyuk, Tomáš Hrnčíř, Jozef Vincenc Oboňa, Martin Petrenec, Jan Michalička
Atomic scale study of Cu2O/ZnO heterojunction interfaces by TEM, STEM and DFT

Sandeep Gorantla, Jiantuo Gan, Ole Martin Løvvik, Spyros Diplas, Kristin Bergum, Bengt Svensson, Edouard Monakhov, Phuong Nguyen, Anette Gunnaes
Atomic-Scale Compositional Fluctuations in Ternary III-Nitride Nanowires

Steffi Y Woo, Matthieu Bugnet, Hieu P T Nguyen, Songrui Zhao, Zetian Mi, Gianluigi A Botton
Automated in situ transmission electron microscopy experiments

Martial Duchamp, Vincent Vignères, Gautier Dufourcq, Vadim Migunov, Rafal E. Dunin-Borkowski
Carrier Localization at Atomic-Scale Compositional Fluctuations in Single AlGaN Nanowires with Nano-Cathodoluminescence

Steffi Y Woo, Luiz Tizei, Matthieu Bugnet, Songrui Zhao, Zetian Mi, Mathieu Kociak, Gianluigi A Botton
Cathodoluminescence and EBIC study of widegap semiconductors and devices

Takashi Sekiguchi
Combining Current Imaging and Electrical Probing for fast and reliable in situ Electrical Fault Isolation

Stephan Kleindiek, Andreas Rummel, Klaus Schock, Matthias Kemmler
Control of Polarity, Structure and Growth Direction in Sn-Seeded GaSb Nanowires

Reza R. Zamani, Sepideh Gorji Ghalamestani, Jie Niu, Niklas Sköld, Kimberly A. Dick
Controlled production and growth of hexagonal gold nanostructures during self-assembly on a Ge(001) surface

Nicolas Gauquelin, Benedykt Jany, Marek Nikiel, Tom Wilhammar, Karel van Den Bos, Sandra van Aert, Konrad Szajna, Johann Verbeeck, Gustaff Van Tendeloo, Franziszek Krok
Defect Investigation by Atomic-Resolution STEM of III-V Horizontal Nanowires grown via Template-Assisted Selective area Epitaxy

Nicolas Bologna, Moritz Knoedler, Mattias Borg, Davide Cutaia, Rolf Erni, Heike Riel, Marta Rossel D.
Diamond-based MOSFETs: Bandgap interface profiling by STEM-EELS

José Piñero, Daniel Araújo, Pilar Villar, Julien Pernot

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The 16th European Microscopy Congress 2016 » Materials Science » Semiconductors and devices

A mechanism for the introduction of threading dislocations in III-nitride epitaxial layers from closed basal stacking fault domains

Analysis of semipolar InxGa1-xN/GaN heterostructures by WBDF and HRTEM imaging

Anomalous contrast behavior for STEM HAADF imaging of ordered In0.33Ga0.67N monolayers

Atomic scale study of Cu2O/ZnO heterojunction interfaces by TEM, STEM and DFT

Carrier Localization at Atomic-Scale Compositional Fluctuations in Single AlGaN Nanowires with Nano-Cathodoluminescence

Control of Polarity, Structure and Growth Direction in Sn-Seeded GaSb Nanowires

Diamond-based MOSFETs: Bandgap interface profiling by STEM-EELS

Anomalous contrast behavior for STEM HAADF imaging of ordered In_0.33Ga_0.67N monolayers