Articles tagged "nanowire"

The 16th European Microscopy Congress 2016
Studying the Formation Dynamics of VLS Silicon Nanowire Devices using in situ TEM
Sardar B. Alam (1), Federico Panciera (2, 3), Ole Hansen (1, 4), Frances M Ross (3), Kristian Mølhave (1)
1. Dept. of Micro and Nanotechnology, Technical University of Denmark, Lyngby, Danemark 2. Department of Engineering, University of Cambridge, Cambridge, Royaume Uni 3. T.J. Watson Research Center, IBM, Yorktown Heights, Etats-Unis 4. Center for Individual Nanoparticle Functionality, Technical University of Denmark, Lyngby, Danemark
Control of the electrical properties of Si nanowires, and in particular their connection to the macroscale environment, is important when developing nanowire applications. We therefore…
The 16th European Microscopy Congress 2016
Aberration corrected CVD-TEM for in-situ growth of III-V semiconductors
Reine Wallenberg (1, 2), Daniel Jacobsson (1), Kimberly Dick Thelander (1, 2), Joacim Gustafsson (3), Stas Dogel (4)
1. nCHREM, Lund University, Lund, Suède 2. NanoLund, Solid state physics, Lund University, Lund, Suède 3. Spectral Solutions, Stockholm, Suède 4. High-technology lab, Hitachi High-technology Canada, Rexdale, Ontario, Canada
We will show the first results from a newly designed Environmental TEM with cold FEG emitter, aberration corrector, heating stage and a free choice of…
The 16th European Microscopy Congress 2016
Assessment of doping profiles in semiconductor nanowires by scanning probe microscopy: Study of p- type doping in ZnO nanowires.
Georges BREMOND (1), Lin WANG (1), Jean-Michel CHAUVEAU (2), Corine SARTEL (3), Vincent SALLET (3)
1. Institut des Nanotechnologies de Lyon (INL), UMR-5270, Lyon, France 2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, Valbonne Sophia Antipolis, France 3. Groupe d'étude de la matière condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Versailles, France
Methods to measure and quantitatively determine the doping profile in semiconductor nanowires ( NW) are strongly requested for understanding the doping incorporation in such one-dimensional …
The 16th European Microscopy Congress 2016
Quantification of dopants in nanomaterial by SEM/EDS
Eric Robin (1), Nicolas Mollard (1), Kevin Guilloy (1), Nicolas Pauc (1), Pascal Gentile (1), Zhihua Fang (1), Bruno Daudin (1), Lynda Amichi (1), Pierre-Henri Jouneau (1), Catherine Bougerol (2), Michael Delalande (3), Anne-Laure Bavencove (3)
1. University Grenoble Alpes, INAC, CEA, Grenoble, France 2. University Grenoble Alpes, Neel, CNRS, Grenoble, France 3. ALEDIA, Grenoble, France
It is long known that doping is a key element in the development of modern semiconductor technology for applications in electronic, nano-electronics, optoelectronics and photonics.…
The 16th European Microscopy Congress 2016
Remnant states and magnetic coupling in Co/Cu multilayered nanowires observed by electron holography
David Reyes (1), Luis Alfredo Rodríguez (1), Bénédicte Warot-Fonrose (1), Nicolas Biziere (1), Travis Wade (2), Christophe Gatel (1)
1. CEMES CNRS-UPR 8011, Université de Toulouse, Toulouse, France 2. Laboratoire des Solides Irradiés, Ecole Polytechnique, CNRS, CEA, Université Paris Saclay, Palaiseau, France
Magnetic nanowires (NWs) are of great interest due to their potential applications in technological devices and fundamental analysis in the spintronic field[1]–[3]. Among the wide…
The 16th European Microscopy Congress 2016
Correlative Nanoscale Luminescence and Elemental Mapping in InGaN/(Al)GaN Dot-in-a-wire Heterostructures
Steffi Y Woo (1), Mathieu Kociak (2), Hieu P T Nguyen (3, 4), Zetian Mi (3), Gianluigi A Botton (1)
1. Department of Materials Science & Engineering, McMaster University, Hamilton, Canada 2. Laboratoire de Physique des Solides, CNRS/Université Paris Sud, Orsay, France 3. Department of Electrical and Computer Engineering, McGill University, Montreal, Canada 4. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, New Jersey, Etats-Unis
Ternary InGaN compounds show great promise for light-emitting diode (LED) applications because of bandgap energies (0.7 – 3.4 eV) that can be tailored to have…
The 16th European Microscopy Congress 2016
3D Investigation of InGaN Nanodisks in GaN Nanowires
Katharina I. Gries (1), Julian Schlechtweg (1), Andreas Beyer (1), Pascal Hille (2), Jörg Schörmann (2), Martin Eickhoff (2), Kerstin Volz (1)
1. Faculty of Physics and Materials Science Center, Philipps-Universität Marburg, Marburg, Allemagne 2. I. Physikalisches Institut, Justus-Liebig-Universität Gießen, Gießen, Allemagne
Nanoscaled structures like nanowires (NWs) can influence device characteristics (e.g. higher internal efficiency [1]), making them very suitable for the application in optoelectronic devices. Complex…
The 16th European Microscopy Congress 2016
Atomic-Scale Compositional Fluctuations in Ternary III-Nitride Nanowires
Steffi Y Woo (1), Matthieu Bugnet (1, 2), Hieu P T Nguyen (3, 4), Songrui Zhao (3), Zetian Mi (3), Gianluigi A Botton (1)
1. Department of Materials Science and Engineering & Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Canada 2. MATEIS, UMR CNRS 5510, University of Lyon – INSA, Villeurbanne, France 3. Department of Electrical & Computer Engineering, McGill University, Montreal, Canada 4. Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, Etats-Unis
Ternary InGaN and AlGaN alloys have been sought after for the application of various optoelectronic devices spanning a large spectral range between the deep ultraviolet…
The 16th European Microscopy Congress 2016
In situ tracking of the heat-induced replacement of GaAs by Au in nanowires
Vidar Fauske (1), Junghwan Huh (2), Giorgio Divitini (3), Mazid Munshi (4), Dasa Lakshmi Dheeraj (4), Caterina Ducati (3), Helge Weman (2, 4), Bjørn-Ove Fimland (2, 4), Antonius van Helvoort (1)
1. Department of Physics, Norwegian University of Science and Technology (NTNU), Trondheim, Norvège 2. Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), Trondheim, Norvège 3. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, Royaume Uni 4. CrayoNano AS, Trondheim, Norvège
For devices, the junctions between the semiconductors and any metal contacts are crucial for the device performance. A heat treatment is commonly applied to improve…
The 16th European Microscopy Congress 2016
Control of Polarity, Structure and Growth Direction in Sn-Seeded GaSb Nanowires
Reza R. Zamani (1), Sepideh Gorji Ghalamestani (1), Jie Niu (1), Niklas Sköld (1), Kimberly A. Dick (1, 2)
1. Solid State Physics, Lund University, Lund, Suède 2. Centre for Analysis and Synthesis, Lund University, Lund, Suède
Among III-V semiconductor materials GaSb is highly interesting for several device applications such as optoelectronics.1 The epitaxial growth of GaSb nanowires has mainly been done…