The 16th European Microscopy Congress 2016
Studying the Formation Dynamics of VLS Silicon Nanowire Devices using in situ TEM
Control of the electrical properties of Si nanowires, and in particular their connection to the macroscale environment, is important when developing nanowire applications. We therefore…The 16th European Microscopy Congress 2016
Aberration corrected CVD-TEM for in-situ growth of III-V semiconductors
We will show the first results from a newly designed Environmental TEM with cold FEG emitter, aberration corrector, heating stage and a free choice of…The 16th European Microscopy Congress 2016
Assessment of doping profiles in semiconductor nanowires by scanning probe microscopy: Study of p- type doping in ZnO nanowires.
Methods to measure and quantitatively determine the doping profile in semiconductor nanowires ( NW) are strongly requested for understanding the doping incorporation in such one-dimensional …The 16th European Microscopy Congress 2016
Quantification of dopants in nanomaterial by SEM/EDS
It is long known that doping is a key element in the development of modern semiconductor technology for applications in electronic, nano-electronics, optoelectronics and photonics.…The 16th European Microscopy Congress 2016
Remnant states and magnetic coupling in Co/Cu multilayered nanowires observed by electron holography
Magnetic nanowires (NWs) are of great interest due to their potential applications in technological devices and fundamental analysis in the spintronic field[1]–[3]. Among the wide…The 16th European Microscopy Congress 2016
Correlative Nanoscale Luminescence and Elemental Mapping in InGaN/(Al)GaN Dot-in-a-wire Heterostructures
Ternary InGaN compounds show great promise for light-emitting diode (LED) applications because of bandgap energies (0.7 – 3.4 eV) that can be tailored to have…The 16th European Microscopy Congress 2016
3D Investigation of InGaN Nanodisks in GaN Nanowires
Nanoscaled structures like nanowires (NWs) can influence device characteristics (e.g. higher internal efficiency [1]), making them very suitable for the application in optoelectronic devices. Complex…The 16th European Microscopy Congress 2016
Atomic-Scale Compositional Fluctuations in Ternary III-Nitride Nanowires
Ternary InGaN and AlGaN alloys have been sought after for the application of various optoelectronic devices spanning a large spectral range between the deep ultraviolet…The 16th European Microscopy Congress 2016
In situ tracking of the heat-induced replacement of GaAs by Au in nanowires
For devices, the junctions between the semiconductors and any metal contacts are crucial for the device performance. A heat treatment is commonly applied to improve…The 16th European Microscopy Congress 2016
Control of Polarity, Structure and Growth Direction in Sn-Seeded GaSb Nanowires
Among III-V semiconductor materials GaSb is highly interesting for several device applications such as optoelectronics.1 The epitaxial growth of GaSb nanowires has mainly been done…