The 16th European Microscopy Congress 2016
Quantitative measurement of doping and surface charge in a ZnO nanowire using in-situ biasing and off-axis electron holography
Semiconducting nanowires (NWs) are widely studied because the properties that stem from their three-dimensional, nanoscale nature open new opportunities for device design. In particular ZnO…The 16th European Microscopy Congress 2016
Assessment of doping profiles in semiconductor nanowires by scanning probe microscopy: Study of p- type doping in ZnO nanowires.
Methods to measure and quantitatively determine the doping profile in semiconductor nanowires ( NW) are strongly requested for understanding the doping incorporation in such one-dimensional …The 16th European Microscopy Congress 2016
Investigation of structural changes of ZnO:Ti thin films prepared by RF sputtering
1. Materials and Technology, New Technology Research Centre, Pilsen, République tchèque
ZnO is a wide used ferroelectric material with a variety of applications. This study investigates ZnO thin films doped by Ti as showing structure change…The 16th European Microscopy Congress 2016
EELS Investigation of the Work Function Reduction in Au decorated ZnO Nanotapers
The study of field emission (FE) from one dimensional (1D) nanostructures is emerging as a promising technology that can make a considerable contribution in the…
Official abstracts site for the European Microscopy Congress