The 16th European Microscopy Congress 2016
Assessment of doping profiles in semiconductor nanowires by scanning probe microscopy: Study of p- type doping in ZnO nanowires.
Methods to measure and quantitatively determine the doping profile in semiconductor nanowires ( NW) are strongly requested for understanding the doping incorporation in such one-dimensional …The 16th European Microscopy Congress 2016
Deformation mapping in a TEM: Dark Field Electron Holography, Nanobeam Electron Diffraction, Precession Electron Diffraction and GPA compared.
The properties of nanoscaled materials can be changed by applying strain and as such there is an interest in the accurate measurement of deformation with nm-scale…The 16th European Microscopy Congress 2016
Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis
Many solid-state properties leave characteristic fingerprints in the angular dependence of electron scattering. STEM is dedicated to probe scattered intensity at atomic resolution, but it…The 16th European Microscopy Congress 2016
Direct comparison of differential phase contrast and off-axis electron holography for the measurement of electric potentials by the examination of reverse biased Si p-n junctions and III-V samples
In this presentation we will compare differential phase contrast (DPC) [1] and off-axis electron holography [2] for the measurement of electrostatic potentials in semiconductor devices.…The 16th European Microscopy Congress 2016
Quantitative and non-destructive defect metrology for beyond Si semiconductors
1. FEI Czech Republic, Brno, République tchèque 2. IMEC, Leuven, Belgique
Electron channeling contrast imaging (ECCI) is a powerful scanning electron microscopy (SEM) technique for the visualization and analysis of crystalline defects like dislocations and stacking…
Official abstracts site for the European Microscopy Congress