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Articles tagged "semiconductors"

  • The 16th European Microscopy Congress 2016

    Assessment of doping profiles in semiconductor nanowires by scanning probe microscopy: Study of p- type doping in ZnO nanowires.

    Georges BREMOND (1), Lin WANG (1), Jean-Michel CHAUVEAU (2), Corine SARTEL (3), Vincent SALLET (3)

    1. Institut des Nanotechnologies de Lyon (INL), UMR-5270, Lyon, France 2. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications (CRHEA), CNRS UPR10, Valbonne Sophia Antipolis, France 3. Groupe d'étude de la matière condensée (GEMaC), CNRS - Université de Versailles St Quentin en Yvelines, Versailles, France

    Methods to measure and quantitatively determine the doping profile in semiconductor nanowires ( NW)  are strongly requested for understanding the doping incorporation in such  one-dimensional …
  • The 16th European Microscopy Congress 2016

    Deformation mapping in a TEM: Dark Field Electron Holography, Nanobeam Electron Diffraction, Precession Electron Diffraction and GPA compared.

    David Cooper (1), Nicolas Bernier (1), Jean-Luc Rouviere (2)

    1. University Grenoble Alpes, CEA LETI, Minatec Campus, Grenoble, France 2. University Grenoble Alpes, CEA INAC, Minatec Campus, Grenoble, France

    The properties of nanoscaled materials can be changed by applying strain and as such there is an interest in the accurate measurement of deformation with nm-scale…
  • The 16th European Microscopy Congress 2016

    Angle-resolved Scanning Transmission Electron Microscopy (ARSTEM) for materials analysis

    Knut Müller-Caspary (1), Oliver Oppermann (1), Tim Grieb (1), Andreas Rosenauer (1), Marco Schowalter (1), Florian F. Krause (1), Thorsten Mehrtens (1), Pavel Potapov (2), Andreas Beyer (3), Kerstin Volz (3)

    1. IFP, Universität Bremen, Bremen, Allemagne 2. GLOBALFOUNDRIES Dresden Module 1, Dresden, Allemagne 3. Philipps Universität Marburg, Marburg, Allemagne

    Many solid-state properties leave characteristic fingerprints in the angular dependence of electron scattering. STEM is dedicated to probe scattered intensity at atomic resolution, but it…
  • The 16th European Microscopy Congress 2016

    Direct comparison of differential phase contrast and off-axis electron holography for the measurement of electric potentials by the examination of reverse biased Si p-n junctions and III-V samples

    Benedikt Haas (1, 2), David Cooper (1, 3), Jean-Luc Rouvière (1, 2)

    1. Univ. Grenoble Alpes, Grenoble, France 2. INAC, CEA, Grenoble, France 3. LETI, CEA, Grenoble, France

    In this presentation we will compare differential phase contrast (DPC) [1] and off-axis electron holography [2] for the measurement of electrostatic potentials in semiconductor devices.…
  • The 16th European Microscopy Congress 2016

    Quantitative and non-destructive defect metrology for beyond Si semiconductors

    Anna Prokhodtseva (1), Tomas Vystavel (1), Andreas Schulze (2), Matty Caymax (2)

    1. FEI Czech Republic, Brno, République tchèque 2. IMEC, Leuven, Belgique

    Electron channeling contrast imaging (ECCI) is a powerful scanning electron microscopy (SEM) technique for the visualization and analysis of crystalline defects like dislocations and stacking…

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