Articles tagged "nitride optoelectronics"

The 16th European Microscopy Congress 2016
Nanocathodoluminescence reveals the mitigation of the Stark shift in InGaN quantum wells by silicon doping
James Griffiths (1), Siyuan Zhang (1), Bertrand Rouet-Leduc (1), Wai Yuen Fu (1), Dandan Zhu (1), David Wallis (1), Ashley Howkins (2), Ian Boyd (2), David Stowe (3), Colin Humphreys (1), Rachel Oliver (1)
1. Department of Materials Science, University of Cambridge, Cambridge, Royaume Uni 2. Experimental Techniques Centre, Brunel University, Uxbridge, Royaume Uni 3. Gatan, Gatan, Oxford, Royaume Uni
InGaN quantum wells (QWs) show high internal quantum efficiencies over the ultraviolet to green spectrum and in white light emitting diodes (LEDs). However a persistent…