The 16th European Microscopy Congress 2016
Mapping electrostatic potentials across the p-n junction in GaAs nanowires by off-axis electron holography
The development of III−V materials on Si platforms, with the aim of reducing production costs while achieving high conversion efficiency, has been a continuing area…The 16th European Microscopy Congress 2016
Chemical reactivity between sol-gel deposited Pb(Zr, Ti)O3 layers and their GaAs substrates
The combination on the same wafer of materials having different physical properties is a key challenge. In particular, functional oxides of the perovskite family are…