The 16th European Microscopy Congress 2016
Delayering of 14 nm Node Technology IC with Xe Plasma FIB
The burgeoning generation of electronic data and the growing need for fast processing is driving the development of unique architectures in microelectronic devices. High device…The 16th European Microscopy Congress 2016
Combining Current Imaging and Electrical Probing for fast and reliable in situ Electrical Fault Isolation
1. Kleindiek Nanotechnik, Reutlingen, Allemagne
Within the last decades, the feature widths of semiconductor devices have become too small to be resolved by state-of the art optical microscopes, and other…The 16th European Microscopy Congress 2016
Artefact-free top-down TEM lamella preparation from a 14 nm technology IC
Semiconductor industry continues to shrink sizes of the electronic devices. Currently commercial state-of-the-art technology node for integrated circuits is 14 nm, while 10 and 7…The 16th European Microscopy Congress 2016
Precision top-down delayering of microelectronics devices using broad-beam argon ion milling
1. E. A. Fischione Instruments, Inc., Export, Etats-Unis
The semiconductor industry is a dynamic, rapidly growing manufacturing sector. In 2015, global sales of semiconductor products increased 9.9% and reached a record US $335.8…
Official abstracts site for the European Microscopy Congress