The 16th European Microscopy Congress 2016
Electron beam drilling rates of silicon crystal measured on various accelerating voltages and probe currents
1. EM Business Unit, JEOL Ltd., Tokyo, Japon
The design rule of the semiconductor device has been miniaturized to be 22/20 nm or 16/14 nm recently. When we analyze a structure of these…
Official abstracts site for the European Microscopy Congress