The 16th European Microscopy Congress 2016
Correlative ECCI and CL of single GaN microstructures obtained using ECP by beam rocking on small areas
SEM can be used to characterize the crystal structure at smooth surfaces, e.g. by mapping of electron channeling pattern (ECP). Layers of GaN grown on…The 16th European Microscopy Congress 2016
Quantitative and non-destructive defect metrology for beyond Si semiconductors
1. FEI Czech Republic, Brno, République tchèque 2. IMEC, Leuven, Belgique
Electron channeling contrast imaging (ECCI) is a powerful scanning electron microscopy (SEM) technique for the visualization and analysis of crystalline defects like dislocations and stacking…
Official abstracts site for the European Microscopy Congress