The 16th European Microscopy Congress 2016
TEM compression of nano-particles in environmental mode and with atomic resolution observations
Characterization of nanomaterials or materials at the nanoscale has drastically increased during the last decades. This increase can be explained by (i) the necessity to…The 16th European Microscopy Congress 2016
In situ TEM nanocompression of MgO nanocubes and mechanical analysis
In this study, we propose an innovative mechanical observation protocol of nanoparticles in the 100 nm size range. It consists of in situTEM nano-compression tests…The 16th European Microscopy Congress 2016
Dislocation mobility in GaN nanowire arrays by in-situ heating in the TEM
Wide bandgap semiconductors are a current area of interest for a new generation of high-temperature, high-voltage and high-power semiconductor-based electronics. Gallium nitride (GaN) is a…The 16th European Microscopy Congress 2016
HRTEM study of structural defects and related deformation mechanisms induced by nanocompression of silicon
Over the last years, progress in nanomaterials design and manufacturing has revolutionized technology and opened up prospects for many scientific researches. The investigations of material…The 16th European Microscopy Congress 2016
Transmission electron microscopy of deformed Laves phase NbFe2
Laves phases are the largest class of intermetallic phases, showing very high strength up to temperatures above 1000 °C, but being very brittle at room…The 16th European Microscopy Congress 2016
Hexagonal patterning of 1-nm Gd nano-fibers based on dislocation templates in Mg-Gd alloys
1. School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, Chine
Mg alloys, the lightest structural metal, generally suffer from low strength and poor deformability, and therefore severely restrict their widespread applications in automotive, aircraft, and…The 16th European Microscopy Congress 2016
Defect Investigation by Atomic-Resolution STEM of III-V Horizontal Nanowires grown via Template-Assisted Selective area Epitaxy
Scaling of silicon microelectronics is reaching fundamental physical limitations related in particular to the power consumption. A possible solution is represented by III-V semiconductors integrated…
Official abstracts site for the European Microscopy Congress