Articles tagged "DFEH"

The 16th European Microscopy Congress 2016
Si:B doping measurement by dark-field electron holography
Victor Boureau (1, 2), Daniel Benoit (2), Jean-Michel Hartmann (3), Martin Hÿtch (1), Alain Claverie (1)
1. CEMES-CNRS and University of Toulouse, , Toulouse, France 2. STMicroelectronics, Crolles, France 3. CEA-LETI, , Grenoble, France
In modern MOS devices, sources and drains are of nanometric dimensions and highly doped (dopant concentration typically > 1020 at.cm-3). Measuring such dopant concentrations and…