Articles tagged "Chemical Composition"

The 16th European Microscopy Congress 2016
Atomic Scale Characterization on III-V Based Heterostructure Nanowire Interfaces
Sriram Venkatesan (1), Peter Krogstrup (2), Christina Scheu (3), Christian Liebscher (4), Gerhard Dehm (5)
1. Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Duesseldorf, Allemagne 2. Nano Science Center and Center for Quantum Devices, Neils Bohr Institute, University of Copenhagen, Copenhagen, Danemark 3. Nanoanalytics and Interfaces group , Max-Planck-Institut für Eisenforschung GmbH, Duesseldorf, Allemagne 4. Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Duesseldorf, Allemagne 5. Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Duesseldorf, Allemagne
Quasi-one-dimensional III-V semiconducting nanowires attract enormous attention owing to their physical properties such as tunable direct bandgap, high surface to volume ratio, high carrier mobility,…
The 16th European Microscopy Congress 2016
Nanoscale quantitative characterization of 22nm CMOS transistor using Scanning Transmission Electron Microscopy (STEM)
Weihao Weng (1), Claude Ortolland (2)
1. Center for Complex Analysis, GlobalFoundries Inc., Hopewell Junction, NY, Etats-Unis 2. Advanced Technology Development, GlobalFoundries Inc., Hopewell Junction, NY, Etats-Unis
22nm Silicon-On-Insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology has a number of performance boosters, such as third generation embedded DRAM, embedded stressor technology and…
The 16th European Microscopy Congress 2016
Quantitative evaluation of the (211)B GaAs/InAs quantum dot heterostructure
Thomas Kehagias (1), Nikoletta Florini (1), Joseph Kioseoglou (1), George Dimitrakopulos (1), Savvas Germanis (2, 3), Charalambos Katsidis (2), Zacharias Hatzopoulos (3, 4), Nikolaos Pelekanos (2, 3)
1. Physics Department, Aristotle University of Thessaloniki, 54124 Thessaloniki, Grèce 2. Department of Materials Science and Technology, University of Crete, P.O. Box 2208, 70013 Heraklion, Grèce 3. Microelectronics Research Group, IESL-FORTH, P.O. Box 1385, 71110 Heraklion, Grèce 4. Department of Physics, University of Crete, P.O. Box 2208, 70013 Heraklion, Grèce
InAs QDs grown on high-index GaAs(h11) surfaces seem to exhibit superior optical properties compared to the usual QD growth on GaAs(001), due to their prominent…