The 16th European Microscopy Congress 2016
Atomic Scale Characterization on III-V Based Heterostructure Nanowire Interfaces
Quasi-one-dimensional III-V semiconducting nanowires attract enormous attention owing to their physical properties such as tunable direct bandgap, high surface to volume ratio, high carrier mobility,…The 16th European Microscopy Congress 2016
Nanoscale quantitative characterization of 22nm CMOS transistor using Scanning Transmission Electron Microscopy (STEM)
22nm Silicon-On-Insulator (SOI) complementary metal-oxide semiconductor (CMOS) technology has a number of performance boosters, such as third generation embedded DRAM, embedded stressor technology and…The 16th European Microscopy Congress 2016
Quantitative evaluation of the (211)B GaAs/InAs quantum dot heterostructure
InAs QDs grown on high-index GaAs(h11) surfaces seem to exhibit superior optical properties compared to the usual QD growth on GaAs(001), due to their prominent…