The 16th European Microscopy Congress 2016
Correlative Nanoscale Luminescence and Elemental Mapping in InGaN/(Al)GaN Dot-in-a-wire Heterostructures
Ternary InGaN compounds show great promise for light-emitting diode (LED) applications because of bandgap energies (0.7 – 3.4 eV) that can be tailored to have…