The 16th European Microscopy Congress 2016
Atomic-Scale Compositional Fluctuations in Ternary III-Nitride Nanowires
Ternary InGaN and AlGaN alloys have been sought after for the application of various optoelectronic devices spanning a large spectral range between the deep ultraviolet…The 16th European Microscopy Congress 2016
Carrier Localization at Atomic-Scale Compositional Fluctuations in Single AlGaN Nanowires with Nano-Cathodoluminescence
Considerable interest has been generated to develop highly efficient deep ultraviolet (DUV) emitters using AlGaN-based alloys with direct bandgaps between 3.4 – 6.1 eV for…