Articles tagged "AlGaN"

The 16th European Microscopy Congress 2016
Quantification of dopants in nanomaterial by SEM/EDS
Eric Robin (1), Nicolas Mollard (1), Kevin Guilloy (1), Nicolas Pauc (1), Pascal Gentile (1), Zhihua Fang (1), Bruno Daudin (1), Lynda Amichi (1), Pierre-Henri Jouneau (1), Catherine Bougerol (2), Michael Delalande (3), Anne-Laure Bavencove (3)
1. University Grenoble Alpes, INAC, CEA, Grenoble, France 2. University Grenoble Alpes, Neel, CNRS, Grenoble, France 3. ALEDIA, Grenoble, France
It is long known that doping is a key element in the development of modern semiconductor technology for applications in electronic, nano-electronics, optoelectronics and photonics.…
The 16th European Microscopy Congress 2016
Atomic-Scale Compositional Fluctuations in Ternary III-Nitride Nanowires
Steffi Y Woo (1), Matthieu Bugnet (1, 2), Hieu P T Nguyen (3, 4), Songrui Zhao (3), Zetian Mi (3), Gianluigi A Botton (1)
1. Department of Materials Science and Engineering & Canadian Centre for Electron Microscopy, McMaster University, Hamilton, Canada 2. MATEIS, UMR CNRS 5510, University of Lyon – INSA, Villeurbanne, France 3. Department of Electrical & Computer Engineering, McGill University, Montreal, Canada 4. Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, Etats-Unis
Ternary InGaN and AlGaN alloys have been sought after for the application of various optoelectronic devices spanning a large spectral range between the deep ultraviolet…