The pulse electric field applied during the diffusion bonding process can impact the diffusion of the atoms and defects in materials and improve the structure and properties. The diffusion bonding process, interface structure and mechanical properties of SiC/Ti joint bonded under pulse electric field have been studied. The results show that the interface reaction layer thickness increases with increasing the pulse amplitude and the duty ratio, whereas it is effected barely by the pulse frequency. The shear strength of SiC/Ti joint increases firstly and then decreases with increasing the pulse amplitude, duty ratio, pulse frequency, that is, there is an optimum value of shear strength. At low pulse frequency, a small amount of TiC phase formed can reduce the residual stress at the interface between SiC and Ti. When the pulse frequency or amplitude is too high, some large TiC particles were produced near the interface, and they induced the micro-cracks at the interface, so the joint performance was deteriorative. The TEM analysis of SiC/Ti diffusion bonding interface reveals that from SiC to Ti side, the interface structure is SiC/fine grain region(phase structure unknown)/ (TiC + Ti5Si3) / TiC / Ti.

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EMC Abstracts - https://emc-proceedings.com/abstract/the-study-on-interface-structure-of-sicti-joint-diffusion-bonded-under-pulse-electric-field/