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Ion implantation into two-dimensional materials for electronic tailoring – observing the behaviour of individual implanted atoms

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Meeting: The 16th European Microscopy Congress 2016

Session: Materials Science

Topic: 1D and 2D materials

Presentation Form: Oral Presentation

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1. Department of Physics and Energy, University of Limerick, Limerick, Irlande 2. Peter Grunberg Institute 9, Forschungzentrum, Julich, Allemagne 3. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, and Peter Grunberg Institute 5, Forschungzentrum, Julich, Allemagne 4. Physikalisches Institut, Georg-August-Universität , Gottingen, Allemagne 5. SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury, Royaume Uni 6. Nidge Vocational School of Technical Sciences, Nigde University, Nigde, Turquie

Keywords: 2D, electronics, graphene, implantation, MoS2

Controlled manipulation of materials on the atomic scale is a continuing challenge in physics and material science. Doping of two-dimensional (2D) materials via low energy ion implantation could open possibilities for fabrication of nanometre-scale patterned devices, as well as for functionalization compatible with large-scale integrated semiconductor technology. High resolution imaging and spectroscopic analysis of these electronic dopants at the atomic scale is fundamental for understanding sites, retention, bonding and resulting effects on Fermi level shifts. This has been made achievable with the advent of aberration corrected transmission electron microscopy (TEM) and scanning TEM, as well as low-loss electron energy loss spectroscopy (EELS).

 

We show for the first time directly that 2Ds can be doped via ion implantation. Retention is in good agreement with predictions from calculation-based literature values [1], as are initial results of the sites of dopants and their influence on the band structure of surrounding atoms. We present results of N- and B-implantation in graphene [2,3] as well as current progress with ion-implantation in TMDCs.

 

  1. Ahlgren, E. H.; Kotakovski, J.; Krasheninnikov, A. V. Phys. Rev. B, 2011, 83, 115424
  2. U. Bangert, W. Pierce D. M. Kepaptsoglou, Q. Ramasse, R. Zan, M. H. Gass, J. A. Van den Berg, C. B. Boothroyd, J. Amani and H. Hofsäss, Nano Letters, 2013, 13, 4902-4907
  3. Demie Kepaptsoglou, Trevor P. Hardcastle, Che R. Seabourne, Ursel Bangert, Recep Zan, Julian Alexander Amani, Hans Hofsaess, Rebecca J. Nicholls, Rik M. D. Brydson,  Andrew J. Scott, and Quentin M. Ramasse, A.C.S., 2015, 9, 11398–11407

Figures:

Substitutional N-implants in monolayer graphene @25 eV with retention of typically ~15% of the original dose (2x10^14 cm^-2). a) HAADF lattice image showing substitutional, implanted atoms, b) enlarged frame of (a) with c) simultaneously acquired N K-edge intensity map and d) EEL spectrum extracted from an EEL spectrum image of the frame area.

To cite this abstract:

Eoghan O'Connell, Beata Kardynal, Jhih-Sian Tu , Florian Winkler, Hans Hofsaess, Demie Kepaptsoglou, Quentin M. Ramasse, Julian Alexander Amani, Recep Zan, Ursel Bangert; Ion implantation into two-dimensional materials for electronic tailoring – observing the behaviour of individual implanted atoms. The 16th European Microscopy Congress, Lyon, France. https://emc-proceedings.com/abstract/ion-implantation-into-two-dimensional-materials-for-electronic-tailoring-observing-the-behaviour-of-individual-implanted-atoms/. Accessed: December 3, 2023

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